![]() ![]() Limiting values In, VDGR drain-gate voltage RGS = 20 k - 55 V VGS gate-source voltage ID NXP Semiconductors Original. Symbol Quick reference ntinued Parameter Conditions Min Typ, Semiconductors N-channel TrenchMOS standard level FET 4. 03 - 14 June 2010 Product data sheet, FET Table 1. This product has been designed and, BUK7508-55A N-channel TrenchMOS standard level FET Rev. Case is electrically, ft dB (Min) 87 ☑0 V (Min) 80 oc a o o II R _ = 1 k il Vo Output Voltage Swing R _ = 100n (Note 5) RL = 1 k ft VCM _J ☑3 ☑2 ☑ 0 ☑1 80 80 25 ☑0 ± 10 70 70 V (Min) dB (Min, _= 10Oil (Note 5) RL = 1 k n ☑3 ☑ 2 V N - 1 1 V to + 11V 100 ☑ 0 V (Min) ± 10 ± 10 80 dB (Min - OCR Scan.Ģ07.22 Kb K 3264 fet transistorAbstract: BUK7508-55A Transistor ( FET) in a plastic package using TrenchMOS technology. 161.71 Kb K 3264 fet transistorAbstract: lm4105 Op Amp 3-264 LH4105/LH4105C Test Circuit for Pulse Response TL/ K/9159-7 Typical, Package T L / K /9 1 5 9 - 2 Top View N ote: 2 and 8 are internally connected. 587.37 Kb K 3264 fet transistorAbstract: r& T O K O FEATURES Available in ± 2.0% or ± 1.0% Output Tolerance Active High On/Off Control, to a logic high level. ![]() Quick reference data Table 2: Quick reference data Symbol Parameter Typ, V - gate-source voltage (DC) Unit 55 - RGS = 20 k Max - drain-source, -55A BUK7608-55A Philips Semiconductors TrenchMOSTM standard level FET 03na19 120 Pder 03nh50 Philips Semiconductors Original. Description N-channel enhancement mode field-effect power transistor in a plastic package, standard level FET 5. 173.99 Kb K 3264 fet transistorAbstract: BUK7608-55A BUK7508-55A BUK7608-55A TrenchMOSTM standard level FET Rev.Ġ2 - 17 January 2002 Product data 1. Limiting values In accordance with the Absolute Maximum, drain-source voltage Tj 25 ☌ Tj 175 ☌ - 55 V VDGR drain-gate voltage RGS = 20 k NXP Semiconductors Original. Symbol Quick reference ntinued Parameter Conditions Min Typ, level FET 4. This product has been designed and, BUK7608-55A N-channel TrenchMOS standard level FET Rev. 2143.89 Kb K 3264 fet transistorAbstract: BUK7608-55A Transistor ( FET) in a plastic package using TrenchMOS technology. #PERSAMAAN TR K3264 PDF#K 3264 fet transistor Catalog Datasheet MFG & Type PDF Document Tags K 3264 fet transistorAbstract: K 3264 fet Philips Semiconductors Product specification TrenchMOS transistor Standard level FET, Semiconductors Product specification TrenchMOS transistor Standard level FET, Semiconductors Product specification TrenchMOS transistor Standard level FET 2.5, specification TrenchMOS transistor Standard level FET BUK7508-55A + VDD + VDD, Philips Semiconductors Product specification TrenchMOS transistor Standard level FET BUK7508 Philips Semiconductors Original. Single Data Rate means that SDR SDRAM can only read/write one time in a clock cycle. DDR SDRAM (Double Data Rate SDRAM): The next generation of SDRAM is DDR, which achieves greater bandwidth than the preceding single data rate SDRAM by transferring data on the rising and falling edges of the clock signal (double pumped). The transfer rate of DDR SDRAM is the double of SDR SDRAM without changing the internal clock. Effectively, it doubles the transfer rate without increasing the frequency of the clock. SDRAM have to wait for the completion of the previous command to be able to do another read/write operation. K3264 Datasheet pdf, K3264 - PDF Datasheet, Equivalent, Schematic, K3264 Datasheets, K3264 Wiki, Transistor, Cross Reference, PDF Download,Free Search Site, Pinout. ![]()
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